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| PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features q q Surface Mountable UltraFast CoPack IGBT C q q q q q UltraFast IGBT optimized for high switching frequencies IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Low Gate Charge Low profile low inductance SMD-10 Package Separated control & Power-connections for easy paralleling Inherently good coplanarity Easy solder inspection and cleaning Highest power density and efficiency available HEXFRED Diodes optimized for performance with IGBTs. Minimized recovery characteristics IGBTs optimized for specific application conditions High input impedance requires low gate drive power Less noise and interference n-channel VCES = 1200V VCE(ON)typ = 2.23V G E(k) E @VGE = 15V, IC = 42A Benefits q q q q q SMD-10 Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 1200 78 42 312 312 42 312 20 350 140 -55 to + 150 Units V A V W C Thermal Resistance Parameter RJC RJC RCS Wt Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink (typical), * Weight Min. -- -- -- -- Typ. -- -- 0.44 6.0(0.21) Max. 0.36 0.69 -- -- Units C/W g (oz) * Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink. www.irf.com 1 IRG4ZH70UD Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES VFM IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. 1200 -- -- -- -- 3.0 -- 30 -- -- -- -- -- Typ. Max. Units -- -- V 1.20 -- V/C 2.23 3.5 2.58 -- V 2.15 -- -- 6.0 -13 -- mV/C 46 -- S -- 250 A -- 10 mA 2.45 3.7 V 2.40 -- -- 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 42A VGE = 15V IC = 78A see figures 2, 5 IC = 42A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 42A VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150C IC = 42A see figure 13 IC = 42A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 390 47 120 100 28 271 189 3.0 3.67 6.67 37 124 200 435 12.36 2.0 7090 420 56 107 160 10 16 680 1400 250 320 Max. Units Conditions 590 IC = 42A 71 nC VCC = 400V see figure 8 180 VGE = 15V -- TJ = 25C -- ns IC = 42A, VCC = 800V 400 VGE = 15V, RG = 5.0 280 Energy losses include "tail" and -- diode reverse recovery. -- mJ see figures 9, 10, 18 9.8 -- TJ = 150C, see figures 11, 18 -- ns IC = 42A, VCC = 800V -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH -- VGE = 0V -- pF VCC = 30V see figure 7 -- = 1.0MHz 160 ns TJ = 25C see figure 240 TJ = 125C 14 IF = 42A 15 A TJ = 25C see figure 24 TJ = 125C 15 VR = 200V 1020 nC TJ = 25C see figure 2100 TJ = 125C 16 di/dt = 200As -- A/s TJ = 25C see figure -- TJ = 125C 17 Notes: Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature (figure 20) VCC = 80% (VCES), VGE = 20V, L =10H, RG = 5.0 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. 2 www.irf.com IRG4ZH70UD 40 F or b oth: LOAD CURRENT (A) 30 D uty c y c le : 50 % T J = 12 5 C T sink = 90 C G a te d riv e a s s pe c ified P ow er D is s ipation = 44 W S q u a re w a v e : 20 60% of rated voltage I 10 Id e a l d io d es 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 150 C TJ = 25 C TJ = 150 C 100 TJ = 25 C 100 10 10 1 V GE = 15V 20s PULSE WIDTH 10 1 5 6 7 V CC = 50V 5s PULSE WIDTH 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4ZH70UD 80 V G E = 15V 4.0 60 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current (A) 3.0 IC = 84 A IC = 42 A 40 2.0 IC = 21 A 20 0 25 50 75 100 125 A 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (C ) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4ZH70UD 14000 20 12000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc VCC = 400V I C = 42A C, Capacitance (pF) 15 10000 Cies 8000 10 6000 Coes 4000 5 2000 Cres 0 1 10 100 0 0 100 200 300 400 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10.0 Total Switching Losses (mJ) 9.0 Total Switching Losses (mJ) V CC V GE TJ IC = 800V = 15V = 25 C = 42A 100 RG =5.0 5.0Ohm VGE = 15V VCC = 800V IC = 84 A IC = 42 A 10 8.0 IC = 21 A 7.0 6.0 0 10 20 30 40 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ( ) G TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4ZH70UD 30 Total Switching Losses (mJ) 20 15 I C , Collector Current (A) RG TJ VCC 25 VGE = 5.0 5.0Ohm = 150 C = 800V = 15V 1000 VGE = 20V T J = 125 oC 100 10 10 5 SAFE OPERATING AREA 0 20 30 40 50 60 70 80 90 1 1 10 100 1000 10000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Turn-Off SOA Instantaneous forward current - IF (A) 100 TJ = 150C TJ = 125C TJ = 25C 10 1 0.0 2.0 4.0 6.0 Forward Voltage Drop - V FM (V) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4ZH70UD 300 100 I F = 84A I F = 42A I F = 21A I F = 84A I F = 42A I F = 21A 200 trr- (nC) Irr- ( A) 10 100 VR = 200 V T J = 12 5C T J = 25 C 0 100 V R = 2 00 V T J = 12 5 C T J = 25 C di f /dt - (A/ s) 1000 1 100 1000 d i f /dt - (A / s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 5000 10000 VR = 2 00V T J = 12 5C T J = 25 C 4000 I F = 84A I F = 84A 3000 di (rec) M/dt- (A /s) I F = 42A IF = 21A I F = 42A I F = 21A Qrr- (nC) 1000 2000 1000 V R = 2 00V T J = 1 2 5 C T J = 2 5 C 0 100 1000 100 100 1000 di f /dt - (A/ s) di f /dt - (A/ s) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4ZH70UD Same type device as D .U.T. 90% V ge +V ge V ce 80% of Vce 430F D .U .T. Ic 10% V ce Ic 5% Ic td (off) tf 90% Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf E off = Vce Ic dt t1+5 S V ce ic dt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g +V g trr Ic Q rr = trr id dt Ic dt tx tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic 10% Irr Vcc V pk Irr Vcc D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4 E rec = t4 V d idIc dt Vc dt t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4ZH70UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0 F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4ZH70UD Case Outline -- SMD-10 Dimensions are shown in milimeters 17.30 14.20 4.27 n/c E(k) G 0.90 5.55 29.00 C 0.90 E E Recomended footprint WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98 10 www.irf.com |
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